? 2006 ixys corporation all rights reserved ds99703 (11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c85v v dgr t j = 25 c to 175 c; r gs = 1 m ? 85 v v gsm transient 20 v i d25 t c = 25 c 200 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 540 a i ar t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 ? p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a85v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 4.0 5.0 m ? trenchmv tm power mosfet n-channel enhancement mode avalanche rated IXTH200N085T ixtq200n085t v dss =85 v i d25 = 200 a r ds(on) 5.0 m ? ? ? ? ? to-3p (ixtq) preliminary technical information g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixth 200n085t ixtq 200n085t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 72 125 s c iss 7600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1040 pf c rss 200 pf t d(on) resistive switching times 32 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 80 ns t d(off) r g = 5 ? (external) 65 ns t f 64 ns q g(on) 152 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 37 nc q gd 42 nc r thjc 0.31 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 200 a i sm pulse width limited by t jm 540 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s90ns v r = 40 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved ixta200n085t ixtp200n085t fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0123456 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 100a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200a i d = 100a fig. 5. r ds(on) normalized to i d = 100a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. ixth 200n085t ixtq 200n085t fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 33.544.555.566.5 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 30 60 90 120 150 180 210 240 270 300 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 43v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved ixta200n085t ixtp200n085t ixys ref: t_200n085t (61) 11-20-06-a.xls fig. 14. resistive turn-on rise time vs. drain current 30 40 50 60 70 80 90 100 25 30 35 40 45 50 i d - amperes t r - nanoseconds r g = 5 ? v gs = 10v v ds = 43v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 4 6 8 101214161820 r g - ohms t r - nanoseconds 25 30 35 40 45 50 55 60 65 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 43v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 52 54 56 58 60 62 64 66 68 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 70 73 76 79 82 85 88 91 94 97 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 43v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 50 52 54 56 58 60 62 64 66 68 70 72 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t f - nanosecond s 50 55 60 65 70 75 80 85 90 95 100 105 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 43v t j = 125oc t j = 25oc t j = 25oc t j =125oc fig. 13. resistive turn-on rise time vs. junction temperature 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v gs = 10v v ds = 43v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 180 200 4 6 8 101214161820 r g - ohms t f - nanoseconds 80 110 140 170 200 230 260 290 320 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 43v i d = 50a i d = 25a
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